SPP2311 mosfet equivalent, p-channel mosfet.
* P-Channel
-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V
* Super high.
such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.
The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.
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